Abstract
Some studies have been made on the semiconducting properties viz. resistivity (ρ), activation energy (ΔE), HALL Coefficient (RH) , mean free path (l0), thermoelectric power (α) etc. of PbS and PbSe films of thicknesses ranging from 1500 A to 35 000 A. The activation energies varied from 0.6 to 1.6 eV and 0.7 to 0.9 eV respectively for PbS and PbSe films depending on film thickness and temperature range. Thinner films had higher ΔE values. The thermoelectric power not only varied but also changed its sign from positive to negative with increase of temperature. Thinner films had greater α than corresponding thicker films. The HALL coefficient and mobility increased particularly for PbSe films both with increase of film thickness and substrate temperature. The negative temperature coefficient of resistance slowly decreased and again increased passing through a minimum with rise of temperature. The semiconduction behaviour of thin films is better explained on the island structure model than by SONDHEIMER’S theory.
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