Abstract
The photovoltaic behaviors of hemin and its organized assembly prepared by Langmuir–Blodgett (LB) technique were studied by surface photovoltage spectroscopy (SPS) and electric field induced surface photovoltage spectroscopy (FEISPS). The SPS of the hemin powder exhibited a strong response originated from the Soret band and a weak response from the Q band. After hemin and the mixture of hemin and n-octadecylamine (ODA) were deposited onto ITO glasses as the thin films by LB technique, the photovoltaic responses became very weak in the whole UV-vis region when no external bias was applied. As the positive external electric field was applied, both pure hemin and the mixture of hemin and ODA LB films showed a strong photovoltaic response at 340 nm.
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