Abstract
Photo-voltage at the semiconductor surface has been investigated by using a new solution of Poisson-Boltzmann equation. Brattain and Bardeen modex for surface traps has been taken in the formulation. Dependence of normalised surface photo-voltage on surface potential under different carrier densities has been estimated and the results are presented graphically.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
