Abstract
The sensor response behaviour of the Pd/3C-SiC (epilayer on Si substrate) Schottky junctions was studied at 400 °C in presence of hydrogen gas with varying concentrations from 500 to 10,000 ppm. The sensitivity, response time and the reversibility were investigated from the transient response characteristics of the sensors. The sensitivity was found to be a function of applied bias across the junction. A gas sensing mechanism has been proposed for these Schottky sensors.
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