Abstract
The sensor response behaviour of the Pd/3C-SiC (epilayer on Si substrate) Schottky junctions was studied at 400 °C in presence of hydrogen gas with varying concentrations from 500 to 10,000 ppm. The sensitivity, response time and the reversibility were investigated from the transient response characteristics of the sensors. The sensitivity was found to be a function of applied bias across the junction. A gas sensing mechanism has been proposed for these Schottky sensors.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
