Studies on nanomaterial-based p-type semiconductor gas sensors.

Abstract

The development of various metal oxide semiconductor materials has resulted in better performance of the gas sensors in terms of selectivity, sensitivity, and response time. Different types of nanostructured materials, i.e., 2D materials, carbon nanotubes, and metal oxides, are used in the gas sensing applications. Generally, the metal oxide-based gas sensor operates at higher temperature to activate the adsorption process between the material surface and the target gas. The higher operating temperature of the gas sensor leads to more power consumption and produces defects in the grain boundary of metal oxide. To improve the selectivity and minimize the power consumption, nanoparticle-based p-type semiconductor materials are being developed. P-type metal oxide-based semiconductor materials have the ability to produce a hole accumulation layer which can chemisorb the oxygen molecules of higher concentration and these materials are not affected by humidity. The structure of p-type nanomaterial-based gas sensor depends upon the fabrication techniques which can affect the sensing properties of semiconductor materials. The hole accumulation layer is also known as conduction layer which is developed in the outer shell of p-type semiconductor material and the sensing mechanism is controlled by grain boundaries which is different from the n-type semiconductor material. This paper reviews the preparation methods, morphological analysis, and sensing mechanisms of nanomaterial-based p-type metal oxide-based gas sensors.