Abstract
Indium doped CdTe polycrystailine films were grown on Corning glass substrates at room temperature by co-sputtering from CdTe-In-Cd targets. The chemical composition, structural, electrical, and optical properties of the films were analyzed as a function of the In and Cd concentrations on the target. Two types of films were prepared: those in which the Cd concentration on the target was varied and the In kept at a fixed concentration and vice versa. From the experimental results, we concluded that using this deposition method n-type In doped CdTe polycrystalline films can be produced with electrical resistivity between 10 2 and 10 3 Ωcm and electron mobility between 0.1 and 0 cm 2 V −1 s −1.
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