Abstract
The admittance technique was used in order to investigate the frequency dependence of dielectric constant (e′), dielectric loss (e″), dielectric loss tangent (tanδ), the ac electrical conductivity (σac), and the electric modulus of PVA (Ni-doped) structure. Experimental results revealed that the values of e′ , e″, (tanδ), σac and the electric modulus show fairly large frequency and gate bias dispersion due to the interface charges and polarization. The σac is found to increase with both increasing frequency and voltage. It can be concluded that the interface charges and interfacial polarization have strong influence on the dielectric properties of metal–polymer–semiconductor (MIS) structures especially at low frequencies and in depletion and accumulation regions. The results of this study indicate that the e′ values of Au/PVA/n-Si with Nickel-doped PVA interfacial layer are quite higher compared to those with pure and other dopant/mixture’s of PVA.
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