Abstract
Electrical conductivity, Hall mobility, thermoelectric power and optical properties were studied for indium-doped zinc oxide films produced by the magnetron sputtering technique. The data were analysed in the light of the existing theories and it was observed that scattering due to neutral impurities together with optical phonons is operative in these films. The optical data indicated a distinct Burstein-Moss shift. The values of carrier concentration, plasma frequency and optical band gap were correlated with each other, indicating the effective mass of carriers to be equal to 0.35 m e.
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