Abstract
Indium doped and undoped CdS films have been deposited on conducting substrates by a chemical bath deposition technique. The doping concentration was varied from 0.005 to 1.0 wt. % of indium. Electrochemical photovoltaic (ECPV) cells are formed with these films and their electrical properties are studied. It is observed that the performance of the cell measured in terms of open circuit voltage (Voc), short circuit current (Isc), efficiency (η), and maximum power output (Pm), is optimum for the cells formed with 0.01 wt. % In-doped CdS photoanode.
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