Abstract
In this study, polycrystalline thin films of ternary AgIn5Se8 compounds with n-type conductivity were deposited on p-type Si substrates from the powder of a Ag3In5Se9 single crystal by a thermal evaporation technique. Transport and photo-transport properties of the In/n-AgIn5Se8/p-Si/Al sandwich structure were investigated by analyzing temperature-dependent dc current–voltage (I–V), and photo-response measurements carried out in the temperature range of 200–360 K. In order to obtain the series resistance (Rs) and shunt resistance (Rsh) values, the parasitic resistance (Rp = ∂V/∂I) was analyzed for forward and reverse voltages. Devices showed very good diode behavior with the rectification factor of about 104 at 1.0 V in dark. The ideality factor n and the barrier height ϕb values of the heterojunction diode were determined by performing different I–V plots. A space charge limited current method was used to determine the conduction mechanism at a high bias region. Spectral photo-response analyses showed a shifting of the band edge to the lower energies with increasing temperature.
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