Abstract
Abstract The effect of temperature on the degree of alloy formation between Cu and In layers has been studied for the preparation of CuInSe 2 films by the selenization technique. The mechanism of alloy formation is different in bilayers annealed at temperatures lower and higher than the melting point of In, or prepared by deposition of Cu and In at 200°C and 150°C, respectively. While the annealing of the precursor up to 200°C produces an alloy in the interface region of Cu and In layers, annealing at 500°C completely changes its morphology. The effect of alloy formation in the precursor on the selenized CuInSe 2 films is studied using structural, morphological, optical and compositional properties.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
