Abstract
In this paper, we present the results of the study of thermoelectric materials formed by pulsed laser deposition on sapphire substrates and representing thin MnSi1.74 films with intermediate germanium layers. A sharp decrease in the thermal conductivity coefficient of superlattices based on manganese silicides and germanium in comparison with single layers of manganese silicide with an equivalent thickness is shown. This allows significantly increasing the thermoelectric figure of merit. The obtained values of the coefficient of thermoelectric figure of merit are comparable with the known literature values that are typical for similar structures.
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