Studies of the g factors and zero-field splitting for the trigonal Ti 2+GaS p defect center in GaP crystal

Abstract

The EPR g factors g ‖, g ⊥ and zero-field splitting D suggested to be caused by a donor–acceptor nearest-neighbour pair defect [Ti Ga 2+–Sp] in GaP:Ti 2+ co-doped with sulphur are calculated from the high-order perturbation formulas based on a two spin-orbit coupling parameter model for the EPR parameters of 3d 2 ion in trigonal symmetry. The calculated results are close to the observed values. The suggestion of [Ti Ga 2+–Sp] pair defect in GaP:Ti co-doped with sulphur is also confirmed from this calculation.