Abstract
The paper reports a GaAs cantilever-mass based on the electromechanical coupling characteristics using pseudomorphic high electron mobility field effect transistor (PHEMT) as the sensitive element. The GaAs PHEMT is embedded in the root of the cantilever to detect the nanometers deformation. The results indicate that the piezoresistive coefficient and sensitivity of microstructure strongly depend on the voltage bias. The saturated region shows a greater sensitivity and piezoresistive coefficient than linear region. And the maximum piezoresistive coefficient is three orders higher than that of silicon. These results will be useful to design high sensitivity sensors.
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