Abstract
The possibility of growing (Sn2)1−x−y(GaAs)x(ZnSe)y, (GaAs)1−x(ZnSe)x solid solutions on a GaAs(100) substrate is shown at the temperature of the beginning of crystallization, respectively, TOC = 570 °C and TOC = 750 °C by the method of liquid-phase epitaxy from a limited tin solution-melt in the cooling rate range of 0.5–3 K/min. The content of the chemical composition and the perfection of the substrate-film boundary of epitaxial layers of solid solutions (Sn2)1−x−y(GaAs)x(ZnSe)y, (GaAs)1−x(ZnSe)x were studied using a scanning electron microscope (SEM).X-ray diffraction studies have shown that the resulting films are single-crystal with (100) orientation and have a sphalerite structure. Using a transmission electron microscope (TEM), we obtained HR TEM images of (GaAs)1−x(ZnSe)x poly- and single-crystal samples grown at a crystallization onset temperature TOC = 750 °C with forced cooling at a rate of 3 deg/min. and 1 deg/min. Some electrophysical and photoelectric properties of the samples have been studied.
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