Studies of superconducting field effect transistors with sheet resistances close to the quantum resistance

Abstract

The effects of applied electric fields on bilayer heterostructures with sheet resistances close to the quantum resistance RQ=h∕4e2 have been studied. The field effect provides evidence that at low temperatures the DS channels consist of superconducting islands coupled by underdoped weak links. By applying electric fields, the critical temperature of the channels is shifted by 10 K and the zero bias anomalies of the weak links are reversed.