Abstract
To investigate the tolerance of single-event upset (SEU) for GaAs devices, we have measured the transient currents induced in GaAs diodes by energetic heavy particles such as 15 MeV oxygen ions. The measurements were made by combining a focused ion microbeam and a wide-bandwidth current-pulse measurement system. The resulting transients were found to be markedly different to those measured in Si diodes. This result can be mostly attributed to a difference in the carrier drift velocities between GaAs and Si. The amount of collected charge in GaAs diodes was also found to be less than that in Si diodes with similar device properties. This fact strongly suggests that GaAs devices have a higher SEU tolerance than Si devices.
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