Abstract
The cluster beam deposition (CBD) method has been applied to fabricate and characterize pentacene-based thin film devices. Atomic force microscopy, scanning electron microscopy, and X-ray diffraction measurements demonstrate that the weakly bound and highly directional cluster beam is effective in producing a highly ordered structure close to a single crystal with a uniform flat film surface. The hole carrier mobility has been determined to be approximately 10 � 4 cm 2 /V s as a lower bound from the J –V characteristics for the ITO/pentacene/Al devices. The Schottky barrier-type MOSFETs with a 10 lm long channel length have been produced and show a typical source–drain current modulation behavior with different gate voltage. 2002 Elsevier Science B.V. All rights reserved.
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