Studies of Na-irradiated Ni/Si bilayers: Na migration and NiSi formation

Abstract

Ion beams of 200 keV 23Na + at a fluence of 1 × 10 17 cm −2 were implanted at 77 K into Ni/Si bilayer couples. The Ni and Si concentration profiles were measured via Rutherford backscattering spectrometry (RBS), and the 23Na and 1H profiles via resonant nuclear reaction analysis (RNRA). Migration of sodium, radiation-induced and thermal silicide formation, and hydrogen decoration were investigated upon thermal treatment up to 940 K. The results on Na migration are compared with those obtained after Na implantation in metals, silicon and Ni/SiO 2 bilayers.