Abstract
We report on the fabrication of p-type ZnO:N layers using radical-source molecular beam epitaxy and post-growth annealing of the samples. Plasma-activated oxygen and nitrogen fluxes are supplied via a single plasma cell. The combination of low growth temperature (350 − 400 ◦C), slightly O-rich conditions, and post-growth annealing in the range of 650 − 800 ◦C results in efficient nitrogen pdoping with Hall hole concentration 3 × 10 cm−3. The details of the structural and the electrical characterizations of the films are discussed.
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