Studies of minority carrier diffusion length increase in p-type ZnO:Sb

Abstract

Minority electron diffusion length was measured in p-type, Sb-doped ZnO as a function of temperature using the electron beam induced current technique. A thermally induced increase of electron diffusion length was determined to have an activation energy of 184±10meV. Irradiation with a low energy (5kV) electron beam also resulted in an increase of diffusion length with a similar activation energy (219±8meV). Both phenomena are suggested to involve a SbZn–2VZn acceptor complex. Saturation and relaxation dynamics of minority carrier diffusion length are explored. Details of a possible mechanism for diffusion length increase are presented.