Abstract
The crystalline structures of metamorphic III–V heterostructures, GaSb/(001)GaAs and GaAs/(001)InP, have been studied by image analyses of high resolution electron microscopy (HREM) micrographs. Digital processing has been performed in order to evaluate the extension of the distorted zone between the substrate and the fully relaxed epilayer. GaSb grown by MBE at 470°C on GaAs is known to be perfectly relaxed by a Lomer dislocation network directly created during the island growth. The transition zone is measured to be few atomic planes thick. For the GaAs, grown on InP by MBE at 450°C, the thickness of the transition zone observed at the interface is 10 nm. The misfit dislocation network involved in the relaxation process appears to be poorly organized with mainly partial and 60° dislocations.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
