Abstract
This article explores the surface architecture formation on layered A3B6 semiconductors, such as In4Se3, InSe, and InTe, focusing on kinetics of surface roughness parameters, such as RMS, skewness and kurtosis, and power spectral density (PSD) under indium deposition studied through large-scale 1 × 1 µm2 and 150 × 150 nm2 scanning tunneling microscopy (STM) images analysis. Our findings reveal common kinetics of surface parameters across different crystals, suggesting fundamental similarities in their interface kinetics. Particularly, PSD analysis elucidates the role of low-frequency spatial structures, underscoring their significance in surface roughness kinetics to some extent independent of the specific layered crystal surface structure.
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