Abstract
Cadmium oxide semiconductors were prepared by heating CdO which also contained hydroxide and carbonate species formed on storage. Reaction of the impurities on heating, and high temperature annealing, produced an unusually wide range of electrical conductivities, EPR spectra and NMR spectra. Changes in EPR spectra were correlated with the 113Cd shift, which was shown to be proportional to the square root of the relaxation rate, and also proportional to the line width. This allowed the Knight shift contribution to the resonance position to be separated from the paramagnetic shielding (due to covalency). The latter was found to be 234 ± 6 ppm relative to Cd(H 2O) 2+ 6. It could then be shown that the Korringa relationship (for degenerate electrons) was satisfied, with T 1 TK 2 = 3.9 ± 0.2 × 10 −6 sK. The variations of the asymmetric line shape with Knight shift were examined in the light of various models for impurity semiconductors.
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