Abstract
ABSTRACTTransmission electron microscopy (plan-view as well as cross-section) and high-resolution Rutherford backscattering and channeling techniques have been combined to investigate residual defects and substitutional concentrations of In and Sb in <100> and <111> orientations of ion implanted silicon layers after solid-phase-epitaxial (SPE) growth at 475–600°C. The maximum concentrations of Sb and In in substitutional sites were found to be, respectively, 1.3 × 1021 and 5.0 × 1019 cm−3 , exceeding the respective retrograde maxima by factors of 18 and 60. These results provide direct evidence of solute trapping and metastable alloying under solid-phase growth conditions. Accumulation of solute at the crystalline-amorphous interface was observed only for indium above a certain interfacial concentration. At still higher interfacial concentrations, the planar interface was observed to become unstable and SPE growth was retarded.
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