Abstract
CdS single crystals ( ϱ = 15–19 ω cm, μ c = 110–270 cm 2/ V · s and n = (1.2–6.6) × 10 15 cm 3 were grown from the vapor phase where the Piper-Polich method was modified to simplify the crystal growth. The impurities in the crystals were investigated by SIMS and were found to be reduced by more than a factor of 10 2 compared with the remainder of the sintered CdS charge. SEM observations on the as-grown surfaces of the CdS single crystals show the existence of hexagonal spiral pits. These pits were found to correspond to dislocations in the bulk CdS crystals.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
