Abstract
CdS single crystals ( ϱ = 15–19 ω cm, μ c = 110–270 cm 2/ V · s and n = (1.2–6.6) × 10 15 cm 3 were grown from the vapor phase where the Piper-Polich method was modified to simplify the crystal growth. The impurities in the crystals were investigated by SIMS and were found to be reduced by more than a factor of 10 2 compared with the remainder of the sintered CdS charge. SEM observations on the as-grown surfaces of the CdS single crystals show the existence of hexagonal spiral pits. These pits were found to correspond to dislocations in the bulk CdS crystals.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
