Abstract
AbstractIn this study, AES was used to thermally clean GaN surfaces, and analysis was done as the temperature was gradually increased. Heating samples to 1010 °C resulted in nearly stoichiometric and contamination‐free surfaces. The behaviour of carbon on the GaN surface was studied with sputtering in AES. It was found that C was a surface issue than a crystal problem. XPS was used to identify the chemical state of the contaminants on the surface of as‐grown GaN. These were found to be in the form of gallium oxides, hydroxides, graphite and carbides. Copyright © 2005 John Wiley & Sons, Ltd.
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