Abstract
AbstractTotal electron yield (TEY) of an InAs/GaAs heterojunction due to soft x-ray excitation has been studied. This heterojunction was prepared by an overgrowth of a 600 Å InAs layer on a GaAs substrate using molecular beam epitaxy. Experimental data are compared with theoretical analysis based on a modified Fresnel formulation to calculate the wave field distribution in stratified media with interfacial roughness. The TEY angular profiles obtained at a given x-ray energy reveal information on the interfacial roughness, secondary electron escape length, attenuation length of elastically scattered photo-electrons, and optical constants of the epilayer in the xray regime.
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