Abstract
This paper reports a study of the molecular beam epitaxial (MBE) growth of ZnSe on GaAs substrates using elemental sources. Growth rates of ZnSe as a function of Se:Zn flux ratio for constant Zn flux were determined over a wider range of values than previously reported. Careful measurements of atomic fluxes and sample thickness lead to a determination of the sticking coefficients of Zn and Se which are at variance with many previously reported values. The temperature dependence of the sticking coefficients of Zn and Se has been measured carefully and provides evidence for a greater desorption of Zn from the growing surface than previously thought, an effect which persists at low growth temperatures. Measurements at high flux ratios support the use of a precursor model to describe MBE growth of ZnSe on GaAs substrates.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
