Abstract
Inner Tracking System (ITS) of ALICE is used for vertex determination and tracking. Future heavy-ion program at the LHC aims to run with high luminosity. To address this challenge, upgrade program of ITS is underway, which aims at better position resolution (factor of 3), high detection efficiency (>99%), high-rate readout capabilities (100 kHz for Pb-Pb) and moderate radiation hardness (> 700 krad). The new ITS will be composed with 7 layers of silicon pixel chip based on Monolithic Active Pixel Sensor (MAPS) technology. The characterization test of various version of prototype chips at different phases of development has been performed. This contribution will provide the main characterization results obtained from the measurements performed at laboratories and using test beam for finalizing the pixel chip specification.
Highlights
ALICE experiment is a dedicated heavy-ion experiment at the LHC
ALICE has confirmed the creation of hot hadronic matter at high density and temperature by measurement of light and heavy flavours, flow, transverse momentum, jet, etc
For significant improvement of vertexing and tracking capabilities at low pT, ALICE Inner Tracking System (ITS) upgrade is underway, which aims at better position resolution, high detection efficiency and high-rate readout capabilities [2]
Summary
ALICE experiment is a dedicated heavy-ion experiment at the LHC. The main goal of ALICE experiment is to study properties of hot and dense matter (regarded as Quark-Gluon Plasma) expected to be produced heavy-ion collisions [1]. For significant improvement of vertexing and tracking capabilities at low pT, ALICE ITS upgrade is underway, which aims at better position resolution, high detection efficiency and high-rate readout capabilities [2]. During the second long shutdown (LS2) of the LHC in 2019-20, the current ITS will be replaced by a new ITS, which will be constructed by 7 layers (3 inner layers and 4 outer layers) of silicon pixel detector based on monolithic active pixel sensor technology. The DEEP PWELL shields NWELL containing PMOS transistor from collecting signal charge It allows of full CMOS circuitry within active area [6]
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