Abstract
Abstrak. Metode dinamika molekuler digunakan untuk mempelajari deposisi atom tembaga (Cu) pada substrat silikon (Si). Interaksi atom-atom Si-Si, Cu-Cu, dan Cu-Si masing-masing dideskripsikan dengan potensial interatomik Tersoff, MEAM, dan Morse. Ensembel NVE dan termostat Berendsen digunakan dalam simulasi ini. Kemudian diinvestigasi pengaruh parameter kecepatan awal dan laju deposisi terhadap persentase struktur amorf, fungsi distribusi radial (RDF), dan bilangan koordinasi. Hasil simulasi menunjukkan perbedaan yang signifikan terhadap persentase struktur amorf pada parameter yang bervariasi. Investigasi pasca-simulasi menunjukkan variasi pada nilai RDF dan bilangan koordinasi. Kata kunci: Metode dinamika molekuler, evolusi struktur, fungsi distribusi radial, bilangan koordinasi Study of Structure Evolution of Copper Deposition on Silicon Substrate using Molecular Dynamics Method Abstract. The Molecular dynamics method was used to study the deposition of copper (Cu) atoms onto silicon (Si) substrate. The interaction of Si-Si Cu-Cu, and Cu-Si atoms were described by Tersoff, MEAM, and Morse interatomic potentials respectively. NVE ensemble and Berendsen thermostat was used in this simulation. The effect of initial velocity and deposition rate on the percentage of amorphous structure, radial distribution function (RDF), and coordination number was investigated. The result showed significant differences of amorphous structure percentage at varied parameters. Post-simulation investigation showed variation in RDF and coordination number. Keywords: Molecular dynamics method, structure evolution, radial distribution function, coordination number
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