STT-MRAM Application on IoT Data Privacy Protection System

Abstract

One of the major problem of Internet of Things (IoT) is that the limitation of the currently available technology cannot simultaneously provided the solution of lower power consumption, higher intelligence, higher security and non-volatile which are critical for IoT designing. Spin torque transfer magnetic random access memory (STT-MRAM) based on magnetic tunneling junction (MTJ), in addition to a high endurance, can also use as embedded non-volatile memory. Compared to all the existing technologies and components, STT-MRAM is more suitable for the IoT objects. Except to provide a better security of network hardware and information security STT-MRAM can also always in non-power standby mode. All IoT objects always maintain the “Instant On” state and thus battery life becomes extremely long. Therefore, this paper focuses on the development of the STT-MRAM application on IoT data privacy protection system. We design a STT-MRAM control circuit and use it to improve the efficiency of operation of IoT data privacy protection.