Abstract
The structuring of magnetic bubble propagation overlay patterns by sputter etching, using photoresist as a mask, becomes imperfect for high definition structures. In the past, reactive sputter etching in an O2 containing atmosphere has been introduced as an alternative, the mask material being a metal such as V, Ti, or Cu. The present paper describes how the etch rate ratio between NiFe and Ti can be considerably increased to at least 10 by replacing oxygen with water vapor. The masking Ti layer can than be extremely thin, which has a beneficial effect on the patterning accuracy.
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