Abstract
The low angle subgrain and grain boundary structure in silicon-on-insulator layers, obtained by various liquid phase recrystallization techniques, was investigated. The effect of different crystallization front velocities has been also studied. Subgrain boundaries are either a one-dislocation boundary or a boundary consisting of two systems of intersecting 30° dislocations. The 60° dislocations ran from the subgrain boundary along the [110]-type directions when the recrystallization was carried out by millisecond pulse heating. The 60° dislocations provide for additional stress relaxation between the subgrains. Grain boundaries are formed at the meeting place of crystallization fronts moving from neighbouring seed windows in the insulating SiO 2 layer. Grain boundaries lie mainly in the (110) plane and consist of rows of perfect Lomer dislocations. The 60° dislocations are observed in the stepped area of the grain boundary.
Published Version
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