Abstract
(Ba0.7Sr0.3)TiO３/LaNiO３ he tero-structure films have been prepared on Si(100) substrate by an improved sol-gel technique. The structures and d ielectric properties for the films have been evaluated as a function of crystall ization temperature. It was found that LaNiO３ films show the lowest resistivi ty after annealing at 750 ℃ in flowing O２ for 30 min. C-V and I-V measureme nts revealed that the (Ba0.7Sr0.3)TiO３ films have excellent diele ctric properties. The dielectric constant of the (Ba0.7Sr0 .3)TiO３ film annealed at 750 ℃ is larger than 300 under the measuring conditions of 50 kHz, zero bias voltage and room temperature. The maximum leakage current dens ity of the hetero-structure is about 1.2×１０－６ A/cm２ under a bias voltage of 6 V.
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