Abstract
MeV He+ ion scattering/channeling (HEIS), angle resolved XPS, and RHEED have been applied to study the Au and MBE-grown GaAs(001)-c(4×4) interface structures in the Au film thickness range of ≲70 Å and the annealing temperature range from room temperature up to ∼300 °C. The results show release of the As atoms and epitaxial growth of the Au film even at room temperature. The shrinked Au film after annealing displays selective registry to the [1̄10] direction, which is believed to result from a strong Au–GaAs(001) interaction.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
Paper Title
Journal
Date
