Structure studies of the near-surface layer of Ge crystals at their bombardment with accelerated ions at various temperatures

Abstract

Abstract The ion-electron emission (IEE) coefficient γ of the (111) face of a Ge single crystal after irradiation with Ar+, Kr+ and N2 + has been studied over a broad energy range. It has been determined that at temperatures near to T a the annealing of radiation damage which affects, to a great extent, the transparency of channels and at lower temperatures leads to surface layer amorphization takes place. T a values for all investigated ions have been determined. Sharp changes of γ in a narrow temperature range of T a ± ΔT are observed to be followed by continuous falling of γ for all angles of bombardment. We relate this falling with the subsequent annealing of remaining structure damage influencing conditions of electron escape from the crystal. At temperatures of the order of 600°C the γ(T) curves for all bombardment angles and all ions studied reach the plateau apparently caused by full or very fast annealing of all radiation damage at this temperatures.