Structure-sensitive oxidation of the indium phosphide (001) surface

Abstract

The oxidation of anion- and cation-rich indium phosphide (001) has been investigated by exposure to unexcited molecular oxygen. Indium phosphide oxidation is an activated process and strongly structure sensitive. The In-rich δ(2×4) surface reacts with oxygen at 300 K and above. Core level x-ray photoemission spectra have revealed that the O2 dissociatively chemisorbs onto the δ(2×4), inserting into the In–In dimer and In–P back bonds. By contrast, the P-rich (2×1) reconstruction does not absorb oxygen up to 5×105 Langmuir at 300 K, as judged by the unperturbed reflectance difference spectrum and low energy electron diffraction pattern. Above 455 K, oxygen reacts with the (2×1) inserting preferentially into the In–P back bonds and to a lesser extent into the phosphorus dimer bonds.