Abstract
In this study, a novel three-dimensional trench detector structure was proposed. The detector structure includes trench electrodes and columnar electrodes. The columnar electrodes are distributed in the middle, the middle of the sides, and the four corners of the cross section of the substrate. A cross-shaped electrode is etched from top to bottom, and a polygonal trench electrode is etched from bottom to top; the bottom of the cross-shaped electrode abuts the top of the polygonal electrode. Electrical characteristics of the novel detector are simulated by Technology Computer Aided Design simulation, and we can obtain that this design reduces the area of the bottom low electric field, optimizes the electric field, and reduces the mutual interference between the cells.
Highlights
Silicon detectors have been used in HEP experiments as tracking or vertexing elements, owing to their good position and energy resolution, but their working surrounding is extremely harsh
Since the three-dimensional electrode silicon detector electrode is embedded in the silicon body, the direction of its depletion electric field is perpendicular to the thickness direction of the silicon wafer, so its depletion voltage is independent of the thickness
The polygonal electrode is formed by four U-shaped portions connected by four linear portions [Fig. 1(c)], and the polygon is coaxial with the columnar electrode in the middle of the detection substrate
Summary
Silicon detectors have been used in HEP experiments as tracking or vertexing elements, owing to their good position and energy resolution, but their working surrounding is extremely harsh. Since the three-dimensional electrode silicon detector electrode is embedded in the silicon body, the direction of its depletion electric field is perpendicular to the thickness direction of the silicon wafer, so its depletion voltage is independent of the thickness.. In order to improve the radiation resistance, we do not need to reduce the thickness to reduce the depletion voltage and the carrier capture, because reducing the thickness will affect the energy deposition of incident particles.. The detector cells usually work as an array, so the trench electrode of the detector cannot be etched through the substrate to prevent the silicon body from falling (10% left), but it causes a low electric field region at the bottom of the substrate.. In order to improve the radiation resistance, we do not need to reduce the thickness to reduce the depletion voltage and the carrier capture, because reducing the thickness will affect the energy deposition of incident particles. The detector cells usually work as an array, so the trench electrode of the detector cannot be etched through the substrate to prevent the silicon body from falling (10% left), but it causes a low electric field region at the bottom of the substrate. In order to reduce the area of the low electric field, a kind of new electrode structure for three-dimensional trench electrode detectors is proposed in this paper
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