Structure optimization of Spindt-type emitter fabricated by triode high power pulsed magnetron sputtering

Abstract

Spindt-type emitters were fabricated with cavities made of Al/Mo/SiO2 using the triode high power pulsed magnetron sputtering method. We explored the process parameters (gas pressure and voltage of the additional cap electrode) to optimize the sharpness of the emitter shape. We found that the intermediate pressure and voltage were suited to obtain sharp emitters. Further, we elucidated the crucial effect of the cavity dimensions, such as the cavity depth and hole diameter in the cavity ceiling, on the emitter shape. At a cavity depth of 480 nm, the aspect ratio (AR) of the emitter increased monotonously with an increase in the hole diameter. With a large hole diameter (900 nm) and even shallower cavity (380 nm depth), we attempted to reoptimize the process parameters. Consequently, a very sharp emitter cone structure with an AR exceeding 1.3 was obtained. The cap voltage that produced the optimum AR was found to decrease for the larger-hole and shallower-depth cavities. Finally, the applicability of the process for preparing a working emitter is discussed.