Abstract
The study deals with the effects of the Mg-doping on the structural, optical and electrical properties of ZnMn2O4. Mgx-ZnMn2O4 is elaborated by Sol-Gel route at 700 °C. The X-ray diffraction profiles show the synthesis of a pure tetragonal phase over the whole 0–0.1% investigated range. No secondary clusters are detected. The attenuated total reflectance spectra position the Mg in octahedral sites. The extinction coefficient, optical conductivity, dissipation factor and the relaxation time are improved. The latter has been upgraded by 70%. The Hall Effect measurements confirm the conserved semi-conducting p-type. The MgMn1− point defects are evidenced; however, an antagonist effect between the carrier concentration and the mobility is generated.
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