Abstract
ZnO thin films were successfully deposited onto PET substrates prepared by using cathodic arc plasma deposition (CAPD) technique at a low temperature (<75 °C). Their structure, optical and electrical properties were investigated with various arc currents (40, 45, 50 and 55 A). ZnO (0 0 2) peak was clearly observed, and increased as the arc current increased from 40 A to 55 A. The calculated average crystallized sizes were around 15.9–17.7 nm. The films have an average transmittance over 85% in the visible region, and calculated values of the band gap around 3.33–3.31 eV with increase of the arc current. It was also found that a slight blue shift of optical transmission spectra was observable when decreasing the arc current. The deposited ZnO films had the lowest resistivity; about 3 × 10 −3 Ω cm for the ZnO film with the arc current of 40 A.
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