Abstract
Molecular beam epitaxy of ultra thin films of Bi2Sr2CuO6 and Bi2Sr2 (Ca0.8 QSr0.2) Cu2O8 are realized on the surface of SrTiO3 (100), LaA1O3 (100) and MgO (100) at the substrate temperature of 600K, using 10-5 Pa of NO2 as an oxidant. The structure of the ultra thin film formed is confirmed by the X-ray diffraction. The in-situ RHEED (reflection high energy electron diffraction) study reveals that the films formed on the surface of the substrate with a small lattice mismatch have identical in plane lattice constants to those of the substrates. As a result, the length of the c axis, perpendicular to the surface of the substrate, is lengthened for the epitaxial film on the substrate with shorter a and b axes (LaA1O3), and is shortened for the longer axes (SrTiO3). For the substrate with a big lattice mismatch of 10% (MgO), the film grown can no longer be the epitaxial growth from the substrate surface and has an identical lattice structure with the bulk material itself.KeywordsLattice ConstantMolecular Beam EpitaxyEpitaxial GrowthLattice MismatchEpitaxial FilmThese keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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