Abstract
Surface structures at the initial stage of indium adsorption on GaP001 are studied by low-energy electron diffraction LEED, scanning tunneling microscopy STM, photoelectron spectroscopy PES, and ab initio calculations. After indium deposition on the P-rich GaP001-2 1 surface followed by annealing at 400– 450 ° C, 4 LEED spots were observed along the 110 direction. STM images obtained after 400 ° C annealing show a 4 2-In reconstruction with row and hump structures. PES result for the 4 2-In surface shows existence of In atoms in two different chemical environments; one with In-In bonding and the other with In surrounded by phosphorus atoms at the surface. These LEED, STM, and PES results are consistent with the structure, which was proposed for cation-rich clean surfaces of III-V semiconductors containing arsenic or antimony. Several plausible models derived from the original model are examined by first-principles calculations for the GaP001-4 2-In surface.
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