Abstract
The exciton reflectance and photoluminescence spectra of epitaxial ZnSe/GaAs layers with a thickness of 2–4 µm are investigated in the temperature range 10–120 K. It is shown that one of the causes of the formation of the doublet structure of the An=1 photoluminescence band is interference of the exciton radiation at the boundaries of the near-surface dead layer.
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