Abstract
A new ESR center at g=2.0029 which was first observed by Chu et al. in silicon implanted with 150-keV argon ions to doses ≳1017 ions/cm2 has been observed, in addition to an amorphous center, in the course of our investigations of amorphous Si layers damaged by ion implantation, when Ar+ implantation dose is more than about 10 times the critical dose for amorphization. These heavily argon-implanted layers of silicon were characterized using ESR and ESCA. The structure of these layers was identified using transmission electron microscopy. It is found that the new ESR center in heavily implanted layers is due to amorphous SiC.
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