Abstract
X-ray photoelectron spectroscopy (XPS) and E-polarization-dependent S K-edge x-ray absorption near-edge structure (XANES) are used to characterize the chemical structure and site location of S on the (NH4)2S-treated GaAs (100) surface. XPS studies show that S forms chemical bonds with both Ga and As on surfaces treated only with (NH4)2S. After receiving a sufficient water rinse, only Ga—S bonds remain on the surface. Photon E polarization-dependent XANES studies show that S is bridge bonded to Ga in the [011] azimuth.
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