Abstract
The structure of stacking faults formed in forward-biased 4H- and 6H-SiC p–n− diodes was determined using conventional and high-resolution transmission electron microscopy. Typical fault densities were between 103 and 104 cm−1. All observed faults were isolated single-layer Shockley faults bound by partial dislocations with Burgers vector of a/3〈1–100〉-type.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
