Abstract
We investigated the structural characteristics of polycrystalline silicon films formed by: (a) single-step laser annealing and (b) two-step furnace at 600 °C and laser annealing of amorphous silicon layers. The structure of poly-Si films of these two groups was studied by crosssection and plane-view transmission electron microscopy observations. In the first group and for constant substrate temperature, crystallite size was found to increase with increasing laser beam energy. However, in this case the grain size never exceeded 300 nm. In the second group large crystallites are formed during the furnace annealing having a high density of in-grain defects. As laser energy increases the ingrain defect density decreases, but the grain size remains constant. Above a certain critical energy however, grain size is drastically reduced whereas the defect density within the grains remains low.
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